adz213r5x
Joined: 23 Mar 2011
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Location: England
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 Posted: Thu 2:37, 31 Mar 2011 Post subject: Now that you have answered those questions message |
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this paper discusses the layout design of the chip gan-based led performance, performance requirements for choice of chips for different map reference. an experiment we use the material for the use of mocvd method on sapphire substrates for gan-based blue led epitaxial wafers, [link widoczny dla zalogowanych] epitaxial wafers for the multi-quantum well structure. chip manufacturing, n ohmic contact electrode using ti / al / ti / au structure.
gan-based led chips in less than 20ma pi iv characteristics and properties and has little size, but the location of the electrodes, p n electrode wire electrodes from the chip 20ma output power under high , forward voltage drop is high. [link widoczny dla zalogowanych] in the high current, p n from electrode wire electrode chip is easily filled, the chip die size large high current performance is better. mosaic structure of the electrode and the electrode on the angle of the characteristics of the chip test found no significant difference compared with each other.
well-known, led is a semiconductor product, if the led pin of the two pins or more components between the medium voltage exceeds the breakdown strength, it will cause damage to the device. the thinner oxide layer, the [link widoczny dla zalogowanych] ic and the greater the sensitivity of static, such as solder is not full, the quality of the solder itself, problems, etc., will have a serious leak paths, resulting in devastating damage. another failure was due to the node temperature exceeds the melting point of semiconductor silicon (1415 ℃) arising from. pulse energy can generate static electricity localized heating, resulting in the breakdown of the lamp and the ic directly to the fault.
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