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UFO Forum
other then ufo subjects
Topic review
<table border="0" cellpadding="3" cellspacing="1" width="100%" class="forumline"> <tr> <th class="thCornerL" width="22%" height="26">Author</th> <th class="thCornerR">Message</th> </tr> <tr> <td width="22%" align="left" valign="top" class="row1"><span class="name"><a name=""></a><b>adz213r5x</b></span></td> <td class="row1" height="28" valign="top"><table width="100%" border="0" cellspacing="0" cellpadding="0"> <tr> <td width="100%"><img src="http://picsrv.fora.pl/Boyz/images/icon_minipost.gif" width="12" height="9" alt="Post" title="Post" border="0" /><span class="postdetails">Posted: Wed 9:17, 23 Mar 2011<span class="gen"> </span> Post subject: LED writing boards or electronic message s</span></td> </tr> <tr> <td colspan="2"><hr /></td> </tr> <tr> <td colspan="2"><span class="postbody">yan su? a tank, to prevent the chip temperature gradient caused by local thermal stress, and the variation of etching rate, the current high-temperature phosphoric acid wet chemical etching sapphire substrate thickness can be precisely controlled 1.9lusm0.1μm, the etching rate for the second 27.5 lusm 0.5 a.led sign v.? n reduced the rate of temperature control: before etching the wafer with pre-heating and cooling etch designate the design of the wafer can be avoided because of the rapid? n drop the temperature of the fragments produced by thermal shock. <br />vf increased. pi according to various characteristics of the territory of the chip show that the following 20ma, neon sign various gan-based led chips are linear pi characteristics of the two mosaic map of the chip size and 350μm & time350μm diagonal layout diagonal electrode chip in less than 30ma the pi characteristics ofessentially the same, when the current is larger, the chip size of a large optical power is greater than the small size of the chip. another 350μm & time350μm p diagonal wire electrodeaway from the territory of the diagonal electrode chip n electrodes, in the normal operating current (<30ma) under high optical power, but the current power saturation faster. <br />the luminous efficiency will reach 120 ~ 130lm / w or more; inindoor lighting / lighting products, the product of light efficiency will reach 100lm / w or more, the unit cost reduced by at least 40% than it is now. in addition, with the increase involume of business and project technology products on the rise, 2010, led message board companies in the "863 project - power type led lighting device of the module" project in product expansion, 180 jobs have been added , forming an annual output of 10 million sets of led light source / light industrial scale.</span></td> </tr> </table></td> </tr> <tr> <td colspan="2" height="1" class="spaceRow"><img src="http://picsrv.fora.pl/Boyz/images/spacer.gif" alt="" width="1" height="1" /></td> </tr> </table>
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