Neon and Led signs are generally

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this paper discusses the layout design of the chip gan-based led performance, performance requirements for choice of chips for different map reference. an experiment we use the material for the use of mocvd method on sapphire substrates for gan-based blue led epitaxial wafers, led sign epitaxial wafers for the multi-quantum well structure. chip manufacturing, n ohmic contact electrode using ti / al / ti / au structure.
through this technology, can solve the power type led device of the module's heat, light efficiency issues, life and other issues. in the thermal design breakthroughs heat pipe miniaturized heat dissipation,neon sign through professional theoretical design and constant experimental verification, to multi-dimensional heat pipe and return heat pipe as the power led of the radiator, the former has been patented, the use of plate (d) .
the luminous efficiency will reach 120 ~ 130lm / w or more; inindoor lighting / lighting products, the product of light efficiency will reach 100lm / w or more, the unit cost reduced by at least 40% than it is now. in addition, with the increase involume of business and project technology products on the rise, 2010, led message board companies in the "863 project - power type led lighting device of the module" project in product expansion, 180 jobs have been added , forming an annual output of 10 million sets of led light source / light industrial scale.